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| BC183LC BC183LC NPN General purpose Amplifier. 1 TO-92 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature Value 45 30 5 100 350 150 - 55 ~ 150 Units V V V mA mW C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = 10A IC = 2mA IE = 10A VCB = 30V VEB = 3V VCE = 5V, IC = 10A VCE = 5V, IC = 2mA VCE = 5V, IC = 100mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA VCE = 10V, f = 1MHz VCE = 5V, IC = 10mA VCE = 5V, IC = 2mA f = 1KHz VCE = 5V, IC = 200mA RG = 2K, f = 1KHz 150 450 900 10 dB 0.55 40 100 80 Min. 45 30 5 15 15 850 0.25 0.6 1.2 0.7 5 V V V pF MHz Typ. Max. Units V V V nA nA VCE(sat) VBE(sat) VBE(on) COB fT hfe NF Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current gain Bandwidth Product Small Signal Current Gain Noise Figure (c)2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 BC183LC Typical Characteristics 1200 1000 800 600 25 C 125 C VCESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN VCE = 5.0V 0.3 0.25 0.2 125 C = 10 0.15 0.1 0.05 0.1 25 C - 40 C 400 - 40 C 200 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 1 10 I C - COLLECTOR CURRENT (mA) 100 Figure 1. Typical Pulsed Current Gain vs Collector Current VBESAT - COLLECTOR-EMITTER VOLTAGE (V) Figure 2. Collector-Emitter Saturation Voltage vs Collector Current VBEON- BASE-EMITTER ON VOLTAGE (V) 1 - 40 C 1 0.8 0.6 125C - 40 C 25 C 0.8 0.6 0.4 0.2 0.1 25 C 125C 0.4 V CE = 5.0 V = 10 100 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 40 1 10 I C - COLLECTOR CURRENT (mA) Figure 3. Base-Emitter Saturation Voltage vs Collector Curent Figure 4. Base-Emitter ON Voltage vs Collector Current I CBO - COLLE CTOR CURRENT (nA) 10 VCB = 45V CAPACITANCE (pF) 5 f = 1.0 MHz 4 3 C 1 2 1 0 C ob 0.1 25 50 75 100 125 T A - AMBIE NT TEMP ERATURE ( C) 150 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) 20 Figure 5. Collector-Cutoff Current vs Ambient Temperature Figure 6. Input and Output Capacitance vs Reverse Bias Voltage (c)2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 BC183LC Typical Characteristics - COLLECTOR VOLTAGE (V) 10 7 5 150 MHz 175 MHz (Continued) CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C 1000 100 3 2 125 MHz 100 MHz 75 MHz 10 V 1 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 1 25 50 75 100 125 T A - AMBIE NT TEMPERATURE ( C) 150 Figure 7. Contours of Constant Gain Bandwidth Product (fT) Figure 8. Normalized Collector-Cutoff Current vs Ambient Temperaure 5 V CE = 5.0 V 10 NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) 4 3 2 1 0 BANDWIDTH = 15.7 kHz 8 I C = 200 A, R S = 10 k I C = 100 A, R S = 10 k I C = 100 A 6 I = 30 A I C = 1.0 mA, R S = 500 I C = 1.0 mA, R S = 5.0 k 4 I C = 10 A 2,000 5,000 10,000 20,000 50,000 100,000 2 V CE = 5.0V 10 100 1,000 R S - SOURCE RESISTANCE ( ) 0 0.0001 0.001 0.01 0.1 1 f - FREQUENCY (MHz) Figure 9. Wideband Noise Frequency vs Source Resistance 625 P D - POWER DISSIPATION (mW) Figure 10. Noise Figure vs Frequency R S - SOURCE RESISTANCE ( ) 10,000 TO-92 500 375 250 125 0 3.0 dB 5,000 4.0 dB 2,000 SOT-23 6.0DB 1,000 500 8.0 dB V CE = 5.0 V 10 dB 200 100 f = 100 Hz BANDWIDTH = 20 Hz 12 dB 14 dB 0 25 50 75 100 TEMPERATURE (o C) 125 150 1 10 100 I C - COLLECTOR CURRENT ( A) 1,000 Figure 11. Collector-Cutoff Current vs Ambient Temperature Figure 12. Contours of Constant Narrow Band Noise Figure (c)2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 BC183LC Typical Characteristics (Continued) R S - SOURCE RESISTANCE ( ) 10,000 R S - SOURCE RESISTANCE ( ) 10000 5000 2000 1000 500 200 100 1 V CE = 5.0V f = 10kHz BANDWIDTH = 2.0kHz 1.0 dB 2.0 dB 3.0 dB 4.0 dB 6.0 dB 8.0 dB 5,000 2.0DB 2,000 3.0 dB 1,000 4.0 dB 500 V CE = 5.0 V f = 1.0 kHz BANDWIDTH 200 = 200 Hz 6.0 dB 8.0 dB 100 1 10 100 I C- COLLECTOR CURRENT ( A) 1,000 10 100 I C - COLLECTOR CURRENT ( A) 1000 Figure 13. Contours of Constant Narrow Band Noise Figure CHARACTE RI STICS RE LATIV E TO VALUE (TA =25 C) Figure 14. Contours of Constant Narrow Band Noise Figure R S - SOURCE RESISTANCE ( ) 10000 5000 2000 1000 2.0 dB 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -100 h oe h fe h re h ie V = 5.0V f = 1.0kHz I = 1.0mA h ie h re h fe h oe 3.0 dB 5.0 dB 6.0 dB 4.0 dB 500 VCE = 5.0V f = 1.0 MHz 200 BANDWIDTH 7.0 dB = 200kHz 8.0 dB 100 0.01 0.1 1 I C - COLLECTOR CURRENT ( A) 10 -50 0 50 100 T J - JUNCTIO N TEMP ERATURE ( C) 150 Figure 15. Contours of Constant Narrow Band Noise Figure CHARACTE RI STICS RE LATIV E TO VALUE (TA =25 C) Figure 16. Typical Common Emitter Characteristics CHARACTERISTICS RELATIVE TO VALUE(I C =1mA) 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -100 h oe h fe h re h ie 100 f = 1.0kHz 10 h ie and h h re h oe V = 5.0V f = 1.0kHz I = 1.0mA h ie h re h fe h oe 1 h oe h fe 0.1 h ie -50 0 50 100 T J - JUNCTIO N TEMP ERATURE ( C) 150 0.01 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 Figure 17. Typical Common Eimtter Characteristics Figure 18. Typical Common Emitter Characteristics (c)2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 BC183LC Package Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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